Magnetic Domain Wall Logic Gates

In order to meet these requirements, scientists are looking beyond conventional electronic circuits and transistors, which are based on the control of the electron charge, and have turned instead to its spin. The electron spin, due to its quantum properties, can only point up or point down. This is an ideal property for digital data where spin up and spin down can represent 1’s and 0’s. Indeed, magnets, the collective manifestation of the electron spin, have been used as storage bits in magnetic hard disc drives (HDDs) since the 1950s. Despite the extensive industrial use of magnets for data storage, one of the key challenges is to build a microprocessor using spin-​based logic devices. Such devices would combine the best of two worlds, namely the data processing capability of transistors with the non-​volatile memory of magnets, thus eliminating the need for energy-​hungry data refresh processes. In 2002, Allwood et al. proposed the idea of magnetic domain-​wall logic with logic operations performed by driving domain walls with a magnetic field through nanoscale wires in a tailor-​made device. Magnetic domain walls are small regions separating magnetic domains with different magnetization. In 2008, scientists from IBM developed the concept of racetrack memory where the magnetic domain walls are shifted along a nanowire using an electric current, making a high-​density, high-​speed, and non-​volatile data storage device possible. This stimulated a great deal of work to improve the domain wall speed and efficiency. Nevertheless, the realization of electrically controlled magnetic domain-​wall logic devices remained to be achieved.  

Summary, there are a number of key features that make this DW logic device special. The computation is closely associated with the non-​volatile racetrack memory. Specifically, this is a logic-​in-memory architecture that can go beyond the so-​called von Neumann bottleneck and reduce the energy used and time needed for the transfer of data between computation and storage units. With this, it becomes possible to create an ultra-​low-power and compact chip, which could perform as both computation and memory. In addition, unlike the CMOS logic where an elementary NAND gate is composed of four transistors and has a complex physical layout, a domain wall NAND gate can be created in a straightforward manner by physically connecting two magnetic racetracks. Furthermore, we can adopt the standard nanofabrication processes used for Silicon CMOS fabrication to create large-​scale domain-​wall logic circuits.

Of course, there are still many challenges before bringing a magnetic domain wall microprocessor into commercial production. One issue is how to write and read the magnetic domains when the structure is made small enough to fulfill the requirement to have a high-​density of devices. It turns out that there are scientists at the Interuniversity Microelectronics Centre (IMEC) in Belgium who are developing a so-​called magnetic tunnel junction (MTJ)/racetrack hybrid architecture, which would provide electric access to nanomagnetic domains on the racetracks. "We will adopt this technology to further develop our logic device into an industry-​ready product as a commercial spin microprocessor." says Zhaochu Luo, physicist at ETH Zurich and Paul Scherrer Institute.

Research Groups

Magnetism and Interface Physics
Mesoscopic Systems